| 摘要 |
PURPOSE:To enable a vapor pressure equilibrium or protection plate itself in a gap between a compound semiconductor to be processed and the protection plate to function as an evaporation source, and to reduce the amount of loss due to evaporation without contamination with other substances, by a method wherein said compound semiconductor is supported by the protection plate of the same kind of material as that of this semiconductor. CONSTITUTION:In the wafer process for compound semiconductors, the manufacture of semiconductor devices, and the like, a substrate 1 to be processed is supported by the protection plate 2a of the same kind of material in its lower surface, and then covered with a similar protection plate 2b in its upper surface. Micro gaps 4a and 4b are formed between the substrate 1 to be processed and the protection plate 2a or 2b in the presence of projections 3 (here triangular in cross-section) which belong to the protection plate. In this state, the whole is housed in a heat treatment case 5 and tightly closed with a cap 6. |
