| 摘要 |
PURPOSE:To enhance the efficiency of a rectifier by rectifying by a parasistic diode formed in an FET. CONSTITUTION:A rectification is performed by a parasitic diode formed in 2SK type MOSFETs 2. An AC power source voltage is applied through a transformer 1 from terminals 4, 5 between the gates and the sources of the FETs 2, and applied to between terminals 6 and 7. When the terminal 6 becomes higher than the terminal 7 in this manner, a current flows to a load 3. On the contrary, when the terminal 6 becomes lower than the terminal 7, no current flows. Thus, the forward voltage becomes slightly high, but the reverse recovery time when the AC voltage is switched can be shortened. |
