| 摘要 |
PURPOSE:To control easily the thickness and distribution of the thin film to be formed by providing an electrode to generate plasma, an optical scanner which can irradiate laser light as desired to a sample, etc. and making the temp. distribution on the sample controllable as desired. CONSTITUTION:A plasma treating device consists of a vacuum vessel 11, an electrode 12 which is supplied with high frequency electric power and generates gaseous plasma, a sample base 16, a laser oscillator 17 and an optical scanner 18 which can control as desired the quantity of the laser light to be irradiated per unit time to the optional position on a sample 13. The base 16, disposed in gaseous plasma, holds the sample 13 on the surface of which a plasma CVD film is formed. A window 16a which allows transmission of laser light is provided to the surface for holding the sample 13 and the laser light is irradiated to the sample 13 through said window to heat the sample. |
