| 摘要 |
PURPOSE:To reduce a dark current and to make an integrated structure, by providing a field effect transistor which is integrated with a photodiode on a second semiconductor layer and whose source and drain electrodes are formed on a first semiconductor layer after removing parts of the second semiconductor layer respectively. CONSTITUTION:An In0.53Ga0.47As layer 12 is allowed to grow as a first semiconductor layer on a semi-insulating InP substrate 11 by a vapor growth method, and thereon an InP layer 20 is allowed to grow. Next, after a deeper diffusion area 17 is formed, shallower diffusion areas 161 and 162 are formed. To make easily ohmic contact, after parts of the InP layer 20 are removed using an etching process, source and drain electrodes of an FET are formed therein. In this way, a diffusion front is formed inside the first semiconductor layer and a current channel area of the FET and a light absorbing layer of the photodiode is formed on the first semiconductor layer 12. |
