| 摘要 |
PURPOSE:To suppress the surface recombination current due to a parasitic element and to dissolve noises by a method wherein a gate electrode is provided on an oxide film on the junction end of the insular region and the surface recombination current is suppressed by adding a higher potential than that of the insular region to the gate electrode. CONSTITUTION:An epitaxial layer 2 is isolated with P<+> type isolation regions 3 to form an insular region 4 and the insular region 4 is made to work as a base region. The surface of the epitaxial layer 2 is coated with an oxide film 8. An N<+> type base contact region 9, base electrodes 10, a collector electrode 11 and an emitter electrode 12 are respectively formed by performing an evaporation of Al and so forth. A gate electrode 13 is provided on the oxide film 8 on the junction end of the insular region 4. By impressing a higher potential than that of the insular region 4 on the gate electrode 13, the surface recombination current is suppressed. Accordingly, the gate electrode 13, being connected to the power line which is the highest potential of a semiconductor integrated circuit, for example, results in having been always biased at a higher which than that of the base potential. By this way, depletion layers, which spread on the junction surfaces of the insular region 4 and the isolation regions 3, are suppressed. As a result, crystal defects being included in the depletion layers are lessened and the surface recombination current is suppressed. |
