| 摘要 |
PURPOSE:To realize an MOS semiconductor device for high withstand voltage by a method wherein a process, that the substrate and the selective oxide mask layer are applied with a silanol compound and the surface of the substrate is coated in a thickness difference, is included in the manufacturing method of the MOS semiconductor device. CONSTITUTION:A substrate 11 and a CVD oxide film 14 are applied with a silanol compound and the surface of the substrate 11 is coated in a thickness difference. That is, the application is performed by a spin-on method that the substrate 11 is disposed on a revolving disc, a liquefied silanol compound 16 is dripped on the substrate 11, the substrate 11 is made to revolve and the silanol compound 16 is spread on the whole surface of the substrate 11 by the centrifugal force. At this time, the silanol compound 16 is thickly adhered on the stepped parts of the end parts of a selective oxide mask layer 13 by the surface tension. After that, the substrate 11 is performed a baking and the silanol compound 16 is made to cure. An ion-implantation is performed from the surface of the silanol compound 16 and P<+> type channel blocking regions 17 are formed in the surface of the field regions 15 of the substrate 11. That is, boron, which is P type impurities, is ion-implanted using both of the silanol compound 16 and the selective oxide mask layer 13 as masks and the channel blocking regions 17 are formed in parts of the field regions 15. |
