| 摘要 |
PURPOSE:To dissolve inconvenience that pattern width is to be formed narrow, and to contrive to enhance manufacturing yield of a semiconductor microwave circuit element by a method wherein Si oxide films are formed previously at respective contact hole parts and respective through hole parts, and after a single crystal spinel film is formed on the whole surface, the spinel film is abraded up to expose the Si oxide film. CONSTITUTION:After a source region 4 and a drain region 5 are formed on an Si substrate 1, an Si oxide film 13 is formed, and after the film thereof is selectively etched, a single crystal spinel film 14 is formed. After the spinel film 14 is abraded up to expose the Si oxide films 13, the Si oxide films 13 are removed to form contact holes 15. A single crystal Si film 16 is formed, and after it is converted into low resistance, selective etching is performed to form an electrode wiring pattern. An Si oxide film 17 is formed on the Si film 16, and after the film thereof is etched selectively, a single crystal spinel film 18 is formed, and abraded up to expose the Si oxide film 17. A single crystal Si film 19 is formed, and the Si film 19 and the Si oxide film 17 are selectively removed to form a through hole 20. The respective processes thereof are repeated to manufacture a semiconductor microwave circuit element. |
