| 摘要 |
PURPOSE:To contrive to improve the long-memory holding characteristics of a semiconductor memory device by a method wherein at least one layer of a silicon oxide film is provided in the interior of one constituent substance of the MIOS structure, that is, insulator, and the efficiency to capture charged particles by the charge trap is enhanced and at the same time, the charge accumulated is prevented from being emitted to the gate electrode. CONSTITUTION:A silicon oxide film 4, which can be used as a tunneling medium, is formed by performing an oxidation on a well-known silicon substrate. A silicon nitriding film 5 is formed on the silicon oxide film 4 by a vapor-phase growth method. A silicon oxide film 6 is formed thereon using an oxidizing method, by which the silicon nitriding film 5 was oxidized. A silicon nitriding film 7 is formed on the silicon oxide film 6 by a vapor-phase growth method. The whole film thickness of the gate insulator, which is needed for the use of the semiconductor memory device, needs to be controlled by this silicon nitriding film 7. Lastly, an aluminum electrode is adhered by an ordinary vacuum evaporating method as a gate electrode 8, thereby enabling to form the semiconductor memory device. |
