发明名称 MANUFACTURE OF SILICON THIN FILM
摘要 PURPOSE:To manufacture a titled silicon thin film having a large area and uniform crystal orientation by depositing polysilicon in an island formed of an insulating material, irradiating a high-output laser in the longitudinal direction of the island, and scanning. CONSTITUTION:The polysilicon 1 is deposited in a recessed island formed on a silicon oxidized film 2 having >=1mu thickness which is formed by the thermal oxidation of a silicon substrate. The silicon oxidized film 2 is heated at >=700 deg.C, and a high-output laser is simultaneously irradiated in the direction as indicated by the arrow 3 for scanning to form a single crystal silicon film having <100> orientation in the vertical direction and <010> orientation in the direction parallel to the groove. The strain of the recrystallized silicon film is reduced, and the generation of cracks is prevented in this way. And the crystal orientattion can be controlled while enlarging the crystal.
申请公布号 JPS60161396(A) 申请公布日期 1985.08.23
申请号 JP19840017359 申请日期 1984.02.02
申请人 NIPPON DENKI KK 发明人 KANAMORI KATSU
分类号 C30B13/06;C30B13/00 主分类号 C30B13/06
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