摘要 |
PURPOSE:To manufacture a titled silicon thin film having a large area and uniform crystal orientation by depositing polysilicon in an island formed of an insulating material, irradiating a high-output laser in the longitudinal direction of the island, and scanning. CONSTITUTION:The polysilicon 1 is deposited in a recessed island formed on a silicon oxidized film 2 having >=1mu thickness which is formed by the thermal oxidation of a silicon substrate. The silicon oxidized film 2 is heated at >=700 deg.C, and a high-output laser is simultaneously irradiated in the direction as indicated by the arrow 3 for scanning to form a single crystal silicon film having <100> orientation in the vertical direction and <010> orientation in the direction parallel to the groove. The strain of the recrystallized silicon film is reduced, and the generation of cracks is prevented in this way. And the crystal orientattion can be controlled while enlarging the crystal. |