| 摘要 |
PURPOSE:To reduce the number of processes, to improve yield and to form a fine gate by directly implanting ions to a metallic film for a Schottky junction and side-etching the metallic film which using an ion implantation layer formed by the ion implantation as a mask. CONSTITUTION:Tungsten silicide is formed on an operating layer 2 shaped on a semiconductor substrate 1 consisting of GaAs, etc. through the selective implantation of Si through sputtering as a metallic film 3 for a Schottky junction, and ions are implanted into a region in which a gate is shaped by focussed ion beams 8 of Ga, etc. Ions are not implanted up to the inner part at that time, and an ion implantation layer 9 is formed on the surface. When the film 3 is etched by reactive ions, the ion implantation layer 9 is changed into a mask, and takes a form shown in the figure. When Si ions are implanted while using the ion implantation layer 9 as a mask, contact regions 6 having an impurity in high concentration are shaped. Lastly, contact electrodes 7 are formed. |
