| 摘要 |
PURPOSE:To eliminate accidents on short circuits by a method wherein a gate electrode is formed through isotropic etching, high-concentration impurity regions as source and drain regions are shaped, the skirt section of the gate electrode is removed through anisotropic etching and a low-concentration impurity region is formed to a removing section. CONSTITUTION:A gate SiO2 film 12 is formed on a P type silicon substrate 11, a substance 13 for a gate electrode consisting of a refractory metal is shaped, and a thin Si3N4 film 14 is further formed. A pattern of a resist 15 for shaping the gate electrode is formed, the Si3N4 film 14 is etched while using the pattern as a mask, and the gate electrode 13a is formed through isotropic etching while using the Si3N4 film 14 remaining under the resist 15 as a mask. An eave-shaped section in the Si3N4 film 14 is removed by phosphoric acid, and the resist 15 is also removed. N<+> regions 15, 16 in high impurity concentration are shaped, and an impurity is implanted up to a range of an intermediate point P in the skirt section of the gate electrode 13a. The skirt section of the gate electrode 13a except a section under the Si3N4 film 14 is removed through etching, and N<-> regions 17, 18 in low impurity concentration are shaped. Accordingly, accidents on short circuits due to the remaining of etching are eliminated. |
