| 摘要 |
PURPOSE:To perfectly deposite a groove part of substrate, eliminate voids and make fast the deposition rate without flow of a large amount of useless gas by providing a quartz gas nozzle which injects silicon epitaxial gas just above the substrate on a susceptor. CONSTITUTION:A branching tube 6 is horizontally connected to the top of quartz nozzle 4 provided passing vertically through a susceptor 2, a gas injector 6a is opened at the lower part of the branching tube 6 opposing to the substrate 5 on the susceptor 2 and the silicon epitaxial gas is injected from just above the substrate 5. A crystal can be deposited on the substrate by heating the substrate 5 placed on the susceptor 2 in the reaction chamber 1 up to a reaction temperature with a high frequency coil 3, injecting the silicon epitaxial gas from the gas injector 6a of quartz nozzle while the nozzle 4 is rotated, and directly injecting such silicon epitaxial gas to the surface from just above the substrate 5. The film thickness can be controlled by increasing (a) the height of T-shaped quartz gas nozzle (distance to the substrate from the injector is adjusted by using a quartz ring), (b) a number of injectors and (c) a number of branching tubes forming the gas injectors. |
