| 摘要 |
PURPOSE:To improve sensitivity by constituting the titled device by a vertical transmission line introducing signal charges up to a signal charge detector, a vertical and horizontal converting section and a horizontal CCD and forming a photoelectric conversion section and a temporary charge storage section in the structure of an electrostatic induction effect type transistor shaped to a substrate approximately vertically. CONSTITUTION:When vertical pulses PHIVG1 are applied to an electrode VG1 from a vertical scanning circuit 105, electron move to an n<+> region 204 and holes move to a p<+> region 203 when beams are projected. Holes stored in the p<+> region 203 are increased only by the potential DELTApsi, and the potential of a potential barrier is also elevated only by DELTApsi. Consequently, vertical pulses PHIVG1 are added to a value charged to a positive value only by DELTApsi, and applied to the p<+> region 203, and electrons are injected to the n<+> region 204 through n<-> epitaxial 202 from an n<+> substrate 201 while holes stored in the p<+> region are discharged to the n<+> substrate 201 side. Accordingly, signal charges are scanned by using the vertical scanning circuit and a vertical transmission line, charges horizontally transferred by a horizontal CCD106 are detected by a charge detector, and electric signals are obtained, thus forming a sufficient dynamic range at a high S/N ratio. |
