| 摘要 |
PURPOSE:To obviate contact faults of a semiconductor device having aluminium wirings, by arranging electrodes and wirings such that the aluminium wirings connected to the electrodes of a semiconductor element in windows are provided on a second insulation film covering the electrodes provided in windows formed in a first insulation film covering the semiconductor element. CONSTITUTION:A gate electrode 4 is provided on a p type silicon substrate 1 through n<+> type source or drain regions 2 and a gate insulation film. An SiO2 film 10 is thermally formed as a first insulation film so as to cover them and is windowed so that conductive polycrystalline silicon electrodes are formed in the windows. A PSG film 12 as a second insulation film is provided to cover the upper surface including these electrodes and is windowed so that aluminium wirings 13 are formed in connection with the conductive polycrystalline silicon electrodes 11. Finally, the uppermost surface is covered with a cover insulation film 6. In such a structure, the polycrystalline silicon electrodes 11 provided between the n<+> regions 2 and the aluminium wirings 13 prevents the growth of a silicon epitaxial layer during heat the heat treatment or operation, and therefore contact faults can be obviated. |
