| 摘要 |
PURPOSE:To obtain a gate electrode having low resistance by a method wherein a thin-film consisting of a refractory metal is formed on an silicon substrate, the thin-film is annealed through heating in a non-oxidizing atmosphere, oxygen in the thin-film is reacted with the silicon substrate and an SiO2 film is shaped just under the thin-film. CONSTITUTION:A refractory metal is formed on the whole surface of a P type silicon substrate 1, and a gate electrode 2 is shaped through patterning. Oxygen in the gate electrode 2 diffuses up to the surface of the silicon substrate 1 through heating and annealing in a non-oxidizing atmosphere to form an SiO2 film 3 just under the gate electrode 2. An N type impurity is implanted while using the gate electrode 2 as a mask to shape N<+> regions 4, 5 as a source and a drain. Oxygen in the gate electrode can be reduced, and resistance is lowered. |
