| 摘要 |
PURPOSE:To eliminate uneven coating which is generated by double coating of photo resist and form a pattern having no defect by providing a process for irradiating the entire surface of a first photo resist with ion and a process for coating the first photo resist with a second photo resist. CONSTITUTION:An aluminum film 3 is formed on the surface of a substrate 1 where a silicon dioxide 2 having the stepped portion is formed. Next, a thin positive type first photo resist 4 which intensely absorbes the light is coated in order to weaken the light reaching the surface of film 3 and absorbing the light reflected at the surface of film 3. After coating the resist 4, the entire surface of resist 4 is irradiated with ion in order to change quality of surface of resist 4 so that it does not dissolve into the solvent of ordinary photo resist. A positive type second photo resist 6 which is used ordinarily is coated on the surface of resist 4 which has changed quality with irradiation of ion. Since there is a layer which has changed quality by irradiation of ion on the surface of resist 4, it does not dissolve into the second photo resist 6. Then exposure is carried out through the photo mask and a part of exposing region 7 is irradiated with the light. |
