| 摘要 |
PURPOSE:To improve the coating adaptability of the film to be laminated as well as to prevent generation of disconnection of wire by having the film of uniform thickness by a method wherein the inner surface of the groove, to be formed on the film to be etched located on a semiconductor substrate, is formed making an inclination widening in upward direction. CONSTITUTION:A reactive ion etching (RIE) is performed on the SiO2 film 2 located on an Si substrate 1 using a resist mask 3, the RIE is temporarily stopped in the midway of the film thickness, and the mask 3 is removed. When the RIE is performed again, the upper edge part of the groove of the film 2 is removed quickly by etching, and an inclined surface widening in upward direction can be obtained. Then, when a metal film 4 is coated thereon, a uniform film thickness is obtained because the upper corner part has an obtune angle, thereby enabling to prevent disconnection of wire. |
