| 摘要 |
PURPOSE:To obtain a grown film of high quality by a method wherein a substrate is covered by a movable electrode of the same potential as a holding electrode during the period wherein plasma is unstable. CONSTITUTION:An anode 101 is arranged under a movable electrode 102, a cathode 104 having a receiving hole of semiconductor substrate 103 is arranged on the upper part of the movable electrode 102, they are airtightly sealed in a container 106 having a cover 108, and reaction gas is introduced 105 and exhausted 109. Power is applied and cut off while the substrate 103 is covered by the wing of the movable electrode 102, the wing is shifted during the period wherein plasma is stable, and the substrate is exposed to plasma. As a result, a chemical vapor deposition having no damage on substrate due to unstable high voltage can be performed. |
