Method for maskless ion implantation.

摘要

This invention relates to an ion implantation apparatus and method for maskless processing of substrate (12), and more particularly, to form ion implanted pattern by selectively scanning a focused ion beam on the surface of a processing substrate (12). The timing of the apparatus is controlled by a variable frequency clock pulse. By using the variable frequency oscillator (25), a clock frequency can be controlled continuously. So, the ion implantation pattern is easily controlled by the clock frequency and scanning number with high accuracy compared to prior art.