| 摘要 |
<p>A semiconductor memory device which is strong against noise such as alpha -ray and has an improved hold characteristic of stored data is disclosed. The device comprises a pair of multi-emitter transistors structured as a flip-flop and is featured in that each of the pair of transistors is provided with a third emitter region (5, 5 min ) and the third emitter region of each of the transistors is electrically connected to the collector (2, 2 min ) of the same transistor.</p> |
