发明名称 TERMINAL ELECTRODE OF SUPERCONDUCTIVE INTEGRATED CIRCUIT
摘要 PURPOSE:To obtain the electrode structure of strong adhesive strength and low contact resistance by using two-layer film composed of Ti as the bottom layer and a metallic film of one of Au, Ag and Cu as the upper layer for a base metallic film of a projecting electrode. CONSTITUTION:A Ti film 10 is vapor-deposited on a surface of a terminal electrode 4 for a projecting electrode and subsequently an Au film 11 is vapor-deposited. After that, liftoff is performed to form the desired pattern shape. Next, by using a metal mask prepared previously, positions of the electrode 4 and an aperture part of the mask are adjusted and then In, Sn and Bi are vapor deposited. After removing the metallic mask, a substrate 1 is heated under the predetermined conditions and In, Sn and Bi are reflown to form a hemispherical projection electrode 12. The projecting electrode base metallic film thus fabricated has the low contact resistance and the adhesive property which is enough mechanically.
申请公布号 JPS60160186(A) 申请公布日期 1985.08.21
申请号 JP19840013477 申请日期 1984.01.30
申请人 KOGYO GIJUTSUIN (JAPAN) 发明人 HIRANO MIKIO;NAKANE HIDEAKI;KAWABE USHIO;YANO SHINICHIROU
分类号 H01L21/60;H01L39/04;H01L39/22 主分类号 H01L21/60
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