| 摘要 |
PURPOSE:To flatten a field oxide film, and to prevent disconnection at the stepped section of a wiring by previously coating the whole surface of a substrate with polycrystalline silicon before diffusing both channel impurities. CONSTITUTION:The whole surface of a CMOS substrate is coated with a polycrystalline silicon thin-film 16. A polycrystalline silicon thin-film 13 is formed through a CVD method. An silicon oxide film 20 to which boron is diffused is shaped on the whole surface, and the oxide film 20 on an NMOS forming region is removed through etching. An silicon oxide film 21 to which arsenic is diffused is formed on the whole surface and arsenic is diffused into the silicon substrate through heat treatment, thus shaping N type source-drain regions 24 and P type source-drain regions 23. The oxide films 20, 21 are removed, and an N type impurity is diffused in high concentration. The polycrystalline silicon thin-film 16 is etched so as to be left on the regions 23, 24 and only to required wiring sections. An insulating film is applied on the whole surface, contact holes are bored, and wiring patterns are formed, thus completing a CMOS. |
