| 摘要 |
PURPOSE:To prevent H3PO4 from generating in the vicinities of the bonding pad regions of a semiconductor device even though water content infiltrates into the device after a resin sealing was performed on the device and to upgrade the moistureproof property of the device by a method wherein an insulating film just under the bonding pad regions is made of silicon nitride. CONSTITUTION:A P-type impurity region 21 is formed in a prescribed region of an N-type semiconductor substrate 20 and an N-type impurity region 22 is formed in the region 21. An insulating film 25 in a double-layer structure formed by laminating in order an Si3N4 film 23 and a PSG film 24 is formed on the main surface of the substrate 20 including the regions 21 and 22. Contact holes 26 and 27, which lead to the regions 21 and 22, are opened in the insulating film 25. Parts of the PSG film 24 on parts of the insulating film 25, where fall on just under bonding pad regions 28a and 29a, are removed and the surface of the Si3N4 film 23 is made to expose. |
