| 摘要 |
A transistor is formed about a recess in the planar surface of a substrate of silicon. A pair of insulating spacers is provided in the recess, each abutting a respective side of the recess. Gate oxide is formed in the recess between the insulating spacers. A gate electrode is provided having one base overlying the gate oxide and the other base substantially coplanar with the planar surface. A source region extends from one side of the channel underlying the gate oxide to the planar surface. A drain region extends from the other side of the channel underlying the gate oxide to the planar surface.
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