| 摘要 |
PURPOSE:To manufacture an LSI of a high integration degree at a higher yield rate by a method wherein an insulating material, which is buried in a groove for element isolation, is made with an oxide of a metal such as W and so forth, or a laminated material of an oxide of such the metal, an SiO2 film and a silicon nitriding film is used as the insulating material. CONSTITUTION:An insulating material, which is buried in a groove for element isolation, shall be made with an oxide of a metal such as W, Mo and so forth, or a two-layer or three-layer film of an oxide of such the metal, an SiO2 film and a silicon nitriding film shall be used as the insulating material. The manufacturing method is as follows: an SiO2 film 2 is made to grow on a substrate 1 and a groove is formed in the substrate 1 using the film 2 as a mask. The SiO2 film 2 is again formed on the whole surface. After that, boron ions are implanted in the bottom part of the groove. The substrate 1 is made to expose only in the bottom part of the groove. W3 is made to grow using mixed gas of WF6 and H2. Then, a thermal treatment is performed in an atmosphere of O2, the W3 is all converted into a W oxide film and the groove part is completely filled with the W oxide film. |
