MANUFACTURE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE:To prevent the generation of etching residue in a stepped section by forming the side wall surface of a conductor wiring layer as the lower layer of a leading-out electrode in an inclined plane at 20 deg. or 60 deg. and removing the conductor wiring layer while using the leading-out electrode as a mask. CONSTITUTION:A P type impurity is diffused selectively in a predetermined region in a semiconductor substrate 20 to form a base region 21. An insulating film 24 having double layer structure of an oxide film 22 and a nitride film 23 is shaped, and windows 26 are bored to the insulating film 24. A conductor layer to which an impurity for forming an emitter region 25 is doped is shaped, and a resist film 27 with an inclined side wall surface is formed on the conductor layer. The conductor layer is changed into a conductor wiring layer 29 through patterning while employing the film 27 as a mask while the emitter region 25 is formed in the base region 21 through heat treatment. An inclined plane in the side wall surface of the conductor wiring layer 29 is formed at an angle of inclination of 20 deg.-60 deg. to the surface of the insulating film 24. An electrode forming layer 31 is shaped on the insulating film 24 and the conductor wiring layer 29 through a contact hole 30.