| 摘要 |
PURPOSE:To reduce implantation of electrons to a semiconductor substrate and backward scattering to an electron beam resist layer at manufacture of a semiconductor device by a method wherein incident electrons are confined to a resist layer and a layer to be processed or between heavy substance layers in the resist layers. CONSTITUTION:A first heavy substance layer 7 is provided directly under an electron beam resist layer 6. A resist layer 5 for processing is provided thick under the substance layer 7. A second heavy substance layer 2 is provided under the resist layer 5. An incident electron beam rushes into the substance layer 2 losing a part of energy thereof according to the resist layer 6, the substance layer 7 and the resist layer 5. Almost all of electrons are scattered backward thereat, and the electrons to reach a substrate 3 are reduced remarkably. While the electrons scattered backward reach the substance layer 7 losing energy in the resist layer 5. Accordingly, the surface layer electron beam resist is exposed only to the incident electrons, and the influence of backward scattering from the substrate 3 is reduced. |
