| 摘要 |
PURPOSE:To increase currents between a source and a drain on operation in a saturation region easily by making a gate oxide film in a MOS type field-effect transistor thicker than a central section within a predetermined range in both end sections of a gate. CONSTITUTION:An silicon substrate 1 is oxidized to form a gate oxide film 4 in uniform thickness, and a polysilicon film 5 to which an impurity as a gate electrode is doped is shaped on the oxide film 4. The silicon substrates in both end sections of the gate 5 are oxidized through thermal oxidation, and oxide films grow in both upper and lower directions, thus obtaining a MOS type field-effect transistor in which film thickness in both end sections 4a of the gate 5 is made thicker than that of a central section 4b of the gate. |
