发明名称 |
TWO-LEVEL THRESHOLD CIRCUITRY FOR LARGE SCALE INTEGRATED CIRCUIT MEMORIES |
摘要 |
<p>TWO-LEVEL THRESHOLD CIRCUITRY FOR LARGE SCALE INTEGRATED CIRCUIT MEMORIES This disclosure relates to circuitry which includes a low threshold detector and a high threshold detector in the form of inverters the respective output signals of which are combined in such a manner that the output signal of the circuitry is a function of the input signal rising above a low threshold and remaining in an on condition until the input signal has risen above a high threshold and then declined below it. In addition, the circuitry includes a circuit memory element in which is stored the last stable state of the circuitry so that if noise or transients should occur on the input line, the circuitry can return to that stable state. This circuit enables the rapid detection of a memory readout even though the signals on the memory sense lines have relatively slow rise and fall times due to the capacitances on those lines which in turn are due to the large number of memory cells involved. Furthermore, the disclosed invention can be employed in any system in which switching speed is of importance.</p> |
申请公布号 |
CA1192271(A) |
申请公布日期 |
1985.08.20 |
申请号 |
CA19820394644 |
申请日期 |
1982.01.21 |
申请人 |
BURROUGHS CORPORATION |
发明人 |
MURRAY, LANCE R.;WU, TA-MING |
分类号 |
G01R19/165;G11C7/06;H03K5/08;(IPC1-7):H03K5/08;G11C7/00 |
主分类号 |
G01R19/165 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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