| 摘要 |
PURPOSE:To form a programmable read-only memory (PROM) storage with the high degree of integration by forming an insulating film, in which there in an extremely thin pin hole, between a first electrode and a second electrode on a semiconductor substrate and self-healing a pin hole section. CONSTITUTION:A MOS type FET consisting of a field oxide film 2, electrodes 3, 4 composed of diffusion layers, a gate oxide film 5 and a gate electrode 6 is formed to the surface of an Si substrate 1, and Al electrodes 9, 10, 11 are shaped penetrated through pin holes 8 in 1mumphi or less bored to an inter-layer insulating film 7 through the inter-layer insulating film 7. When voltage is applied to the electrode 10 to bring the MOS type FET to a conductive state and voltage of 10V or higher is applied between the electrode 11 and the electrode 9, an electrode material in the pin hole sections 8 is melted and a self-heeling phenomenon is generated, the first electrode 9 and the second electrode 3 consisting of the diffusion layer are brought to a nonconductive state, and informations are written. |
