| 摘要 |
PURPOSE:To pattern an aluminum film at a large etching speed, and moreover with high precision by a method wherein mixed gas of carbon fluoride gas and hydrogen gas is ionized according to plasma, and accelerated to be projected to the aluminum film. CONSTITUTION:The pattern of an organic resin film 41 is formed on a substrate 11, an aluminum film 12 is deposited thereon, and moreover a Permalloy film 21 to be used as a mask material is deposited. Then, a photo resist film 13 is formed on the Permalloy film 21. Then, the Permalloy film 21 is patterned according to ion beam etching using Ar gas. Then, the used photo resist film 13 is exfoliated, and the aluminum film 12 is patterned according to reactive ion beam etching using mixed gas of CF4 gas and hydrogen gas using the Permalloy film as a mask. |
