| 摘要 |
PURPOSE:To lower series resistance, and to reduce a short gate effect by implanting ions in order to form a channel layer and shaping a gate electrode through a lift-off while implanting ions in order to form source-drain regions as being separated from the gate electrode. CONSTITUTION:An insulating film 16 is applied on a GaAs substrate 1, and a gate electrode is patterned by a photo-resist film 17. A window for a gate electrode section is bored, and ions are implanted in order to form a channel layer 2' and a metallic film 9 for the gate electrode is applied. The metallic film 9 is lifted off, and the gate electrode 5' is patterned. Ions are implanted 10 in order to shape source-drain regions while being separated from the gate electrode by 0.1-0.3mum. The source-drain regions 3', 4' and the channel layer 2' are connected electrically through annealing in order to activate ion implanting layers. Lastly, source-drain electrodes 6, 7 are formed through a lift-off. |
