发明名称 ION-IMPLANTED MAGNETIC BUBBLE ELEMENT
摘要 PURPOSE:To separate adjacent bubble transfer paths from each other with a high reproducibility to eliminate malfunctions of magnetic bubbles between transfer paths by using a micro ion beam to vary directly distortion of an ion- implanted distortion layer. CONSTITUTION:The section of a micro ion beam 8 is a perfect circle having a desired diameter, and its intensity has Gaussian distribution. When this beam is scanned along the center lines of mask layers 3 as shown by arrows in a figure (b), distortion in a magnetic garnet film 2 formed by ion implantation is in edge parts of mask layers and is small in center parts between adjacent transfer paths. Next, the ion beam is scanned along center lines of adjacent mask layers 3, and then, distortions between adjacent tranfer paths are synthesized to form ion-implanted transfer paths whose distortion is varied as shown in a figure (c). That is, the value of distortion is large in edge parts of transfer paths, and the distortion layer (the value of distortion) causing malfunctions is reduced in center parts.
申请公布号 JPS60157795(A) 申请公布日期 1985.08.19
申请号 JP19840011940 申请日期 1984.01.27
申请人 HITACHI SEISAKUSHO KK 发明人 IMURA AKIRA;UMEZAKI HIROSHI;SUGITA KEN
分类号 G11C11/14 主分类号 G11C11/14
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