| 摘要 |
PURPOSE:To obtain an ohmic contact of high performance by adding an insignificant amount of sulfur to an AuGe electrode contacting a Ga1-4AlXAs layer. CONSTITUTION:When an alloy electrode is formed on an element such as a luminous diode, etc. obtained by growing an N type Ga1-XAlXAs on a P type GaAs substrate, 0.3-0.4wt% of sulfur is added to AuGe electrode contacting the Ga1-X AlXAs layer 2. Then after evaporation at 3,000Angstrom through resistance heating, 1,000Angstrom of nickel is accumulated and further, 2,000Angstrom of gold is accumulated for enhancing bondability. After this process, an alloy is made at 500 deg.C for 3min. As to an interelectrode resistance, the resistance value is not increased, even if the mixed crystal ratio of aluminum were high, so that an ohmic contact of high performance can be obtained. Thus it is possible to provide an ohmic contact of high performance without intervention of an ohmic contact layer such as the GaAs layer, etc. in the GaAlAs layer having a high mixed crystal ratio. |
