| 摘要 |
PURPOSE:To enable to manufacture a lateral mode control without special steps by controlling the magnitude of cleaved surfaces of reflecting surfaces of a resonator to obtain the lateral basic mode. CONSTITUTION:A Ga0.7Al0.3As clad layer 32, a GaAs active layer 33, and a Ga0.7Al0.3As clad layer 34 are sequentially grown with a GaAs contact layer 35 by a liquid phase epitaxie method on an plane azimuth (511) n type GaAs substrate 31, and an SiO2 film 36 for narrowing a current is formed. Electrode metals are deposited on both side surface of (511) surface. Then, a wafer is cleaved in (011) direction and then (101) direction to manufacture an element. Numeral 37 is an effective resonance region of this element. |
