| 摘要 |
PURPOSE:To obtain a semiconductor laser which is made of a single chip and has a large output and inexpensive cost by forming a plurality of striped light emitting regions, and forming a plurality of independent electrodes corresponding to the light emitting regions. CONSTITUTION:An n type clad layer 12, an active layer 13, a p type clad layer 14 and an n type cap layer 15 are sequentially formed by a liquid phase epitaxial method on an n type substrate 11. Then, a plurality of striped p type diffused layers 17 are formed in parallel, and electrodes 16 independent from each other are formed on the upper surface of the layers 17. Since the layers 17 are formed in the striped shape by a photolithographic technique, the longitudinal axis of the layers 17 can be readily formed in parallel. Then, striped light emitting regions 20 are also formed in parallel in the longitudinal axes in the layer 13 at the lower side of the layers 17. Accordingly, the lights emitted from the regions 20 become in parallel. Further, since the electrodes 16 are divided, currents can be independently supplied to the stripes 17. |
