发明名称 TREATMENT OF MICROWAVE PLASMA
摘要 PURPOSE:To virtually equalize distribution of plasma density and to improve the uniformity in treatment by oscillating the maximum region of plasma density distribution between the center and the periphery of the surface of a substrate to be treated. CONSTITUTION:A substrate 120 is brought in a vacuum container 21 and placed on a supporter 100. An etching gas is introduced in the container through a nozzle 20 from a treatment gas supply equipment 90. A microwave generated in a microwave generating equipment 60 is absorbed by a discharge tube 30 through a waveguide 40 and an electric field is generated. A current is supplied to air- core solenoid coils 50a-50c from direct current power sources 51a-51c and a magnetic field perpendicular to the electric field is generated. The amplitude of the current supplied to the air-core solenoid coil 50c is varied and the density of the magnetic flux is changed. The region where distribution of plasma density is the maximum is oscillated between the center and the periphery of the surface being treated of the substrate 120 and the distribution of plasma density is virtually equalized thereby the uniformity of treatment by etching is improved.
申请公布号 JPS60154620(A) 申请公布日期 1985.08.14
申请号 JP19840010083 申请日期 1984.01.25
申请人 HITACHI SEISAKUSHO KK 发明人 YAMAMOTO NORIAKI;SHIBATA FUMIO;KANAI NORIO;OKUDAIRA SADAYUKI;NISHIMATSU SHIGERU
分类号 H01L21/302;H01L21/3065;(IPC1-7):H01L21/302 主分类号 H01L21/302
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