| 摘要 |
PURPOSE:To prevent generation of both rise in temperature and warpage of an insulator by a method wherein an energy beam is made to irradiate on the first region of the non-single crystal located on an insulator, and after said region has been single-crystallized, an energy beam is made to irradiate on the separate second region which is not adjoined to the first region. CONSTITUTION:The region whereon a semiconductor chip will be formed is divided into a number of small regions 5, and a sweeping irradiation is performed on the small regions starting from #1. The small regions #1 and #2 are to be positioned non-adjacently, they are separated sufficiently, a sweeping irradiation is performed on the small regions #2-#7 before performance of an irradiation on the region 8 which is adjoining to the region #1, and the heat of the region #1 is sufficiently dissipated. According to this method, no warpage is generated even when an annealing is performed on the polysilicon layer of approximately 1mum in thickness which is deposited on the insulating film of approximately 1mum thickness located on an Si substrate using the electron beam of 1mum in diameter for 1,000mm./sec at a sweeping pitch of 0.5mm. and said polysilicon layer is single- crystallized. |
