| 摘要 |
PURPOSE:To build a C-MIS element on an optimum semiconductor layer by a method wherein polycrystalline Si layers are respectively re-crystallized into Si layers equipped with plane indices of 111 and 110 whereon N type or P type elements are formed. CONSTITUTION:On a quartz glass substrate, a large polycrystalline Si layer 1 and several small polycrystalline Si layers 2 are formed. Next, scanning is performed by an Ar<+> laser, for fusion of the layers 1, 2 for re-crystallization or conversion into single-crystal layers. The layers 1, 2 now have planes with indices of 100 and 111, respectively. An N-MIS element and P-MIS elements are formed respectively on the layers 1, 2. An Si layer or substrate equipped with an index suggesting a higher carrier mobility is selected and an N type or P type element is built on the selected layer or substrate. |
