| 摘要 |
PURPOSE:To obtain a positive type photosensitive resin compsn. superior in heat resistance and dry etching resistance by mixing an alkali-soluble novolak resin and/or polyhydroxystyrene or its deriv. with 1,2-quinonediazide and a cross-linking agent. CONSTITUTION:An intended photosensitive resin compsn. suitable as a resist for use in fabrication of semiconductor integrated circuits is obtained by dissolving in an org. solvent, such as cellosolve acetate, (A) 100pts.wt. of alkali-soluble novolak resin obtained by additionally condensing phenols with aldehydes in the presence of an acid catalyst, and/or polyhydroxystyrene or its deriv., (B) 5- 100pts.wt. of 1,2-quinonediazide, such as 1,2-benzoquinonediazide sulfonic ester, and (C) 0.5-50pts.wt. of a cross-linking agent, such as ditertiarybutyl peroxide. |
