发明名称 WIRE BONDING METHOD
摘要 <p>PURPOSE:To set lower wire loop and form a thin semiconductor device by transferring a capillary with regulation to the height of 1,000mum of less from the substrate surface at the time of guiding the capillary inserting the bonding wire to the second bonding point after the end of first bonding. CONSTITUTION:After forming a desired ball 23 at the tip end of bonding wire 22 extruded at the tip end of capillary 21, a bonding tool is moved downward causing the call 23 to bite the capillary 21 at the tip end of tool, pressing the pad at the surface of semiconductor pellet 24. When the capillary 21 is moved to the predetermined point of lead frame 25 which is the second bonding point, the lifting height 26 of capillary 21 is regulated to the height lower than 1,000mum or less. Thereafter, wire 22 is pressurized to the frame 25 and the capillary 21 is moved upward, the wire 22 is cut, a ball 23 is formed again with an electri cal torch 27. Thereafter, next bonding is carried out.</p>
申请公布号 JPS61174731(A) 申请公布日期 1986.08.06
申请号 JP19850014318 申请日期 1985.01.30
申请人 TOSHIBA CORP 发明人 OKANO KEITARO;YAMAGUCHI MASAYOSHI
分类号 H01L21/60 主分类号 H01L21/60
代理机构 代理人
主权项
地址