| 摘要 |
<p>Lateral Device Structures Using Self-Aligned Fabrication Techniques Submicron lateral device structures, such as bipolar transistors, Schottky Barrier diodes and resistors, are made using self-aligned fabrication techniques and conventional photolithograph. The devices are made using individual submicron silicon protrusions which extend outwardly from and are integral with a silicon pedestal therefor. Both PNP and NPN transistors may be made by diffusing appropriate dopant material into opposing vertical walls of a protrusion so as to form the emitter and collector regions. The protrusions themselves are formed by anisotropically etching the silicon using submicron insulating studs as a mask. The studs are formed using sidewall technology where a vertical sidewall section of a layer of insulating material is residual to a reactive ion etching process employed to remove the layer of insulating material.</p> |
