| 摘要 |
The invention relates to a magnetic bubble memory having a first layer of monocrystalline magnetic material with at least one crystallographic axis having the property of being aplanar easy magnetization axis, whereby the first layer has groups of unimplanted, contiguous and aligned motifs, called first motifs, permitting the propagation of the bubbles into a second magnetic layer, positioned below the first magnetic layer, the first motifs being shaped in such a way that two cavities are defined between two first adjacent motifs, wherein each group of first motifs has an axis such that the first motifs of the group are arranged symmetrically with respect to the axis, the groups being arranged parallel to the crystallographic axis of the first layer of material, and wherein it comprises, associated with each group, an electrical conductor, called the first conductor, permitting the duplication of the bubbles, each conductor being arranged perpendicular to the crystallographic axis of the first layer of material, the corresponding group of first motifs being traversed by the conductor.
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