| 发明名称 |
Trench etch process for dielectric isolation |
| 摘要 |
A process for etching deep trenches to achieve dielectric isolation for integrated circuit devices; the process insures obtaining substantially perfectly vertical trench walls by precluding significant variation in etch bias during the trench formation.
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| 申请公布号 |
US4534826(A) |
申请公布日期 |
1985.08.13 |
| 申请号 |
US19830566593 |
申请日期 |
1983.12.29 |
| 申请人 |
IBM CORPORATION |
发明人 |
GOTH, GEORGE R.;HANSEN, THOMAS A.;VILLETTO, JR., ROBERT T. |
| 分类号 |
H01L29/78;H01L21/302;H01L21/3065;H01L21/308;H01L21/76;H01L21/762;(IPC1-7):H01L21/20;C23C13/04 |
主分类号 |
H01L29/78 |
| 代理机构 |
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代理人 |
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| 主权项 |
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