| 摘要 |
PURPOSE:To form controllably a single crystal semiconductor layer of a large area on an insulator, by radiating ions while heating a polycrystalline semiconductor layer to change it to an amorphous state and then to the single crystal layer. CONSTITUTION:After a heat-resisting insulator layer 2 is formed over the surface of a silicon substrate 1, an opening 3 is formed. Thereafter, a polycrystalline silicon layer 4 is formed and an ion beam 5 such as Ar, Ne, B, P, As and Si is then implanted while heating the semiconductor substrate 1 to 600-800 deg.C. With the ions implanted, the polycrystalline silicon layer 4 becomes locally an amorphous state, and then becomes locally a single crystal layer 45 while making the semiconductor substrate 1 seed crystal. When the ion beam 5 is moved in the direction of the arrow 6 from the area of the opening 3 to the polycrystalline silicon film area being formed over the surface of the insulator film 2, the polycrystalline silicon film area becomes the single crystal silicon layer 45, having become the amorphous state. |
