| 摘要 |
PURPOSE:To obtain organic semiconductor diodes excellent in junction characteristic and easy in manufacture by a method wherein a p type organic semiconductor doped with a p type impurity is joined to an n type organic semiconductor doped with an n type impurity via organic ultrathin film. CONSTITUTION:A high polymer polyacetylene film of a polymer organic semiconductor such as polyacetylene is formed on the electrode on a clear glass substrate 2 with a formed clear electrode 1 of ITO or the like. Next, the whole is dipped in a potassium, naphthalene complex solution, and the polyacetylene film is changed into the n type organic semiconductor 3 by impurity doping. Thereafter, an LB film using a polymerizing monomer such as W-tricosanoic acid diacetylene derivative is formed by the use of the LB method; further, only a necessary part is hardened with light or electron beams, and an unnecessary part is made as the organic ultrathin film 4 serving as an i-layer by development and removal. Then, a p type high polymer polyacetylene (p type organic semiconductor 5) is formed. Finally, Al, Au, and the like are evaporated and an electrode 6 is formed by etch-removal of the unnecessary part, when a pin diode is formed. |
