| 摘要 |
PURPOSE:To enable the titled device for detecting three components of force well-uniform in characteristics and small in size to be obtained by a method wherein a plane where diffused type strain gauges are prepared is made as the 111-plane by using single crystalline Si excellent as an elastic material as a pressure-sensitive structure. CONSTITUTION:At each required position of a plane 13 vertical to the pressure reception plane 8 of a ringform pressure-sensitive structure 7 made of N type Si single crystal, a plurality of P type diffused type strain gauges 101-104, 111- 114, and 121-124 are formed by a planar technique. These strain gauges are arranged at a place having a high sensitivity and not logically influenced by the other two-dimensional component force. The strain-gauge-forming plane 13 is the 111-plane of crystal. In order to manufacture a sense of contact force sensor, a group of diffused strain gauges 101-124 and metallic wirings are formed in the region 17 corresponding to the sensor unit cell of the 111-plane of a single crystal Si wafer having a fixed direction of crystal orientation by a planar technique such as maskless ion beam processing or Al evaporation. |
