| 摘要 |
PURPOSE:To enable the manufacture of the titled device advantageous for mass production having no adverse effects left on characteristics by a method wherein the ring center holes and unnecessary parts of a plurality of pressure-sensitive structure sections formed in a semiconductor plate are removed by etching, and the structures are separated by cutting at joints. CONSTITUTION:As the pressure-sensitive structure, a plurality of P type resistance element regions 7 and wirings are formed in an N type Si single crystal plate 6. This Si plate 6 is coated with a mask 8, and next the plate 6 is partly etched, thus leaving the ring part of each pressure-sensitive structure in the thickness of the plate 6. When the joint of the plate 6 and the ring part is coated with another mask 10 and then etched again, the center hole 12 penetrates and the part between respective ring part is removed by excluding the joint 11. Then, a structure having projections 11 in four directions is obtained by separating the center of the joint 11. The pressure reception plane is formed by removing one of the projections 11, and this structure is fixed to the recess of a supporting plate by utilizing the projection 11 on the opposite side, then the sense of contact force sensor with the pressure-sensitive structure coupled with the supporting plate is completed. |
