| 摘要 |
PURPOSE:To increase the number of processed wafers and to facilitate the automatic handling, by carrying wafers parallel on a wafer supporting member having a plural of tiers whose axial line coincides with that of a cylindrical reacting container and by providing with a uniformly-heating tube consisting carbon or silicon carbide arranged concentrically. CONSTITUTION:Wafers 52 are carried on tiers (a) of a wafer supporting member 54. While reacting gas is supplied from a reacting gas supply nozzle 53 and purge gas such as hydrogen gas is supplied from a nozzle 60, a uniformly-heating tube 58 is heated by infrared ray lamps 55 to cause the wafers 52 to epitaxial- grow. Since the space in the uniformly-heating tube 58 becomes practically a uniform-temperature atmosphere by its heating, both the top and bottom surfaces of the wafers 52 is more uniformly heated. Accordingly, thick-irregularity of epitaxial films owing to irregularity of the temperature distribution over the wafers 52 hardly results. The wafers 52 are took in and out, with carried on carrying jigs 65 which are to be set in the wafer supporting member 64. |
