| 摘要 |
PURPOSE:To perform rapidly and systematically quantitative evaluation of a semiconductor crystal having a high resistance by a method wherein stripped electrodes matching with the impedance of a system of measurement are used. CONSTITUTION:Electrodes made uniformly with a metal are adhered on the back surface of a GaAs crystal 1, while plural pieces of stripped electrodes 2 are adhered on the surface thereof. The width of each electrode 2 is set so as to match with the impedance of a system of measurement and each electrode 2 shall be transparent at least partially in order to make the incidence of light possible. DC bias voltage is impressed on the electrodes 2 from a bias power source 8 and pulse light is inputted from a pulse light source 3. The measuring device for seimconductor crystal evaluation consists of the pulse light source 3, a signal detector 4 with detects light to emit from the crystal 1, a high-frequency oscillator 5 which supplies with a high-frequency signal to the crystal 1, a directional coupler 6 which is used as an input and output part for signal to the crystal 1, and a signal detector 7 for a high-frequency signal. |
